lpcvdnitride

LPCVD refers to a thermal process used to deposit thin films from gas-phase precursors at subatmospheric pressures.

A low pressure chemical vapour deposition (LPCVD) reactor was transformed into an inductively coupled plasma like plasma enhanced chemical vapour deposition ...

The LPCVD Silicon Nitride furnace is a low pressure CVD furnace with a 40” flat zone capable of processing up to 6” diameter wafers. Process gases used are ...

LPCVD nitride can easily be deposited in a reproducible, very pure and uniform way. This leads to layers with good electric features, very good coverage of ...

A low-pressure chemical-vapor-deposition (LPCVD) nitride process that was characterized for film uniformity and particle density is described.

A Low-Stress Silicon Nitride is a blend of Si(x)N(y) compounds chosen to match the Silicon wafer lattice and therefore lower the residual stress to below 200MPa ...

Low-pressure chemical vapor deposition (LPCVD) is a reliable, mature technology widely used in the microelectronics field to pro- duce nearly stoichiometric ...

Thin films of silicon nitride, SixNy , are of special interest for microsystem technology, e.g., as a construction material in micromechanical sensors1 or in x- ...

應力(dyne/cm2) >1010(拉伸) +2x109~-5x109. LPCVD Nitride 薄膜獨特的特性，就是高達1010dyne/cm2 以上的拉伸應. 力(Tensile Stress)，其薄膜厚度不宜超過一定範圍，以免發生 ...